Effects of Annealing Temperature on the Dual Solution Synthesis and Optical Characterization of AlS: ZnS Thin Films

Abstract

SnS: ZnS alloyed thin films were successfully deposited on glass substrates using two solutions-based methods: SOLUTION GROWTH and technique at room temperature. Aluminium sulphate (AlSO4.7H20) was the source of Al, Zinc sulphate (ZnSO4.7H20) was the source of Zn, sodium thiosulphate (Na2S2S03) served as the source of S. Ethylene DiamineTetraacetic Acid (EDTA) was used as the complexing agent. The effect of variations in annealing temperature was studied. The optical and solid state properties of the film like Reflectance (R), Absorbance(A), Transmittance (T), Refractive Index (n), Extinction Coefficient (K), Refractive index (n), Absorbance Spectra (A), and Transmittance Spectra T (%) were determined. These properties make AlS suitable for solar cell fabrication, and architectural design to reduce exposure to skin cancer, cataracts and impaired immune system due to UV rays. The band gap of the film suggested that the material is a semiconducting thin film. In recommendation, this material has high transmittance and is capable of absorbing UV rays, urgent development of this technology is recommended to lenses and mirror manufacturers