Enhancing AgBiS2 Solar Cell Efficiency: Buffer Layer Comparison and Parameter Optimization

Abstract

This research presents a comprehensive numerical simulation-based examination of AgBiS₂ thin-film solar cell optimization, investigating various device parameters and buffer layer materials. The study evaluates the performance of CdS, CdZnS, and ZnS buffer layers, both with and without an Sb₂S₃ back surface field (BSF), utilizing SCAPS-1D simulation software. Findings indicate that CdZnS outperforms other buffer materials, achieving a maximum efficiency of 14.81% when combined with the Back Surface Field (BSF). The investigation analyzes the impact of multiple factors, including absorber layer thickness, defect density, temperature, and parasitic resistances. An optimal absorber thickness of 250 nm is identified, while the negative effects of increasing defect density and series resistance are demonstrated. Among the examined buffer materials, CdZnS exhibits superior thermal stability, maintaining high performance across a wide range of temperatures, and thus emerges as a promising candidate for high-temperature solar cell applications. The study emphasizes the advantageous characteristics of AgBiS₂, particularly its high absorption coefficient and appropriate band gap, establishing its potential for photovoltaic applications.