Temperature Programmed Desorption Approach in Understanding the Development of Semiconductors and Catalyst

Abstract

This comprehensive article review delves into the extensive utility of temperature-programmed desorption (TPD) as a valuable technique for understanding the intricate development of semiconductors and catalysts. TPD serves as a powerful tool that provides profound insights into the surface chemistry of materials, enabling researchers to gain a comprehensive understanding of various crucial aspects. The article covers a wide range of TPD aspects, including the analysis of surface functional groups, system temperature control, the impact of oxidation and surface treatment, the significance of heat treatment, the dynamics of adsorption and desorption processes, the thermodynamics underlying TPD measurements, surface group characterization techniques, accurate analysis, and measurements considerations, and the importance of sequential surface treatment. By comprehending these multifaceted aspects, researchers can effectively optimize the performance of semiconductors and catalysts, as well as develop novel materials with enhanced properties. Ultimately, the article emphasizes the remarkable versatility and power of TPD in the dynamic realm of semiconductor and catalyst development.