Structural and Optical Properties of Pva Capped Nickel Oxide Thin Films Prepared by Chemical Bath Deposition
Keywords:
Nickel oxide, thin filnts, senüconductor, optical propertiesAbstract
COMMUNICATION IN PHYSICAL SCIENCES 1(1): 43-47
Authors: S.C Ezugwu , F.I. Ezema, R.U. Osuji, P.U. Asogwa, A.B.C. Ekwealor, B.A. Ezekoye
Nickel oxide thin filins were deposited by a sünple and inexpensive chenücal bath deposition within the pores ofpolyvinyl alcohol fronl an aqueous solution coinposed ofnickel sulphate, potassiunt chloride and anvnonia at roonz tentperature. The films were characterized by using x-ray diffraction, Rutherford backscattering and optical absorption jneasurenents. XRD reveals the development of well-crystallized fihns. The value of the optical band gap energy, Eg, calculated fronl the absorption spectra ranged between 2.8 and 3.2eV.
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References
B.O. Dabbousi, M.G Bawendi, O.omtduku and M. F. Rubne: Apli Phys. Lett. 66 (1996)
Z.H. Mbele•, Chem Mater. 15 (2003) 5019.
X. Lu, L.Li, W. Zhang and C.Wang•, Nanotechnology 16 (2005) 2233
Structural and Optical Properties of Pva Capped Nickel Oxide Thin 47
M.Pattabi, B.S Amm and K. Manzoor;
Mater.Res. Bull.42 (2007) 828
K. Pato, E. Swatsitang, W.Jareonboon, S.
Maensiri, V. Promarak; Optoelectronic and
Advanced Materials-Rapid
Communications,l (2007) 287-293
R. Devi, P. Purkayastha, P. K. Kalita and B. K. Sarma; Bull. Mater. sci., 30 (2) (2007) 223
S. Jana, R. Thapa, R. Maity and K. K. Chattopadhyay; Physica E (2008) doi; 10.1016/j Physe.2008.04.015
P.K Ghosh, S. Jana, U.N Maity and K.K Chaltopadhyay; Physica E 35 (2006) 178
W. Lou, X. Wang, M. Chen, W. Liu and J. Hao;
Nanotechnology 19(2008) 225607
J.P.Cheng, X.B. Zhang, Z.Q. Luo; surface, and coatings Tech.202 (2008) 4681-4686
D.S. Dhawale, A.M. More, S.S. LAtthe, K.Y. Rajpure, C.D. Lokhande; Applied Surface
Science 254 (2008) 3269-3274
P.M. Rorvik, A Almii, A.T.J. Helvoort,
R.Holmestad, T.Tybell, T. Grande, M.
Einarsrud; Nanotechnology 9 (2008) 225605
R.S.Vaidyanathan; INTERFACE 16 (2007) 2
K.F. Lin, H. M. Cheng, H.c. Hsu, L.T Lin and W.F. Hsieh; Chem. Phys. Lett. 409(2005) 208
Z. A. Peng and X.G. ZPeng; J. Am. Chem. Soc. 123 (2001) 183
R. J. Powell and W. E. Spicer, Phys. Rev. B 2, (1970)1.
B. Fromme, d-d Excitations in Transition-Metal Oxides, Springer Tracts in Modern Physics, 170 (2001)1.
H. Ohldag, A. Scholl, F. Nolting, S. Anders, F. U. Hillebrecht, and J. Stöhr, Phys.
Rev. 86 (2001) 2878.
H. Yamane and M. Kobayashi, J. Appl. Phys.
, (1998) 4862.
H. Sato, T. Minami, S. Takata, and T Yamada, Thin Solid Films 236, (1993) 27.
I. Hotovy, J. Huran, L. Spiess, R. Capkovic, and S. Vacuum 300.
S. A. Makhlouf and K. M. S. Khalil, solid state
Ionics 164, (2003)9723
A. Azens, L. Kullman, G. Vaivars, H. Nordborg, and C.G. Granqvist, Solid State ionics 449 (1998) 113-115.
M. Tachiki, T. Hosomi, and T. Kobayashi, Jpn.
J. Appl.Phys., Part 139, (2000) 1817.
Y. Kakehi, S. Nakao, K. Satoh, and T. Kusaka,
J. cryst. Growth, 591 (2002) 237-239.
Y. R. Park and K. J. Kim, J. Cryst.•Growth 258, (2003) 380.
S.Y. Wang, W. Wang, W. Z. Wang, and Y.w.
Du, Mater. Sci. Eng. B. 90, (2002) 133.
J.K. Kang and S.W. Rhee, Thin solid Films, 57 (2001) 391.
M. Utriainen, M. Kröger-Laukkanen, and L. Niinistö, Mater. Sci. Eng. B. 54, (1998)98. I.
Pankove; Optical Processes in Semiconductors, Prentice-Hall, Inc (1971)
S.A. Cetin and I. Hikmet; America Institute of Physics (2007) 978-0-7354
S. Mahmoud and O. Hamid•, FIZIKA, A 21-30
F.l. Ezema, M.N. Nnabuchi, R.U. osuji; J. of Appl. Sci. Research 5 (2005) 467-476.
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