Confinement Effects and Emission Spectra of〖α-Ga〗_x 〖In〗_(1-x) N Quantum Dots Nanostructure
Keywords:
Quantum dot nanostructure, quantum Confinements, nitride, anisotropic band structureAbstract
Communication in Physical Sciences, 2020, 7(3): 164-173
Authors: Onyekwere O. Ikedichukwu and Oriaku I. Chijioke*
Received: 12 August 2021/Accepted 09 September 2021
Quantum confinements in spherical semiconductor quantum dots (QDs) have been theoretically studied using the Particle in a box Model based on the effective mass approximation and quantum confinement effects. The valence band degeneracy in Г point of the Brillouin zone and the effective mass anisotropy are also taken into account. The emission intensity spectrum was also investigated to understand the effect of alloy composition(x) on the spectrum. The results show that the ground state confinement energy is largely dependent on the radius of the dot and alloy composition(x). Thus, as the dot radius decreases, the confinement energy increases. Hence, confinement energies could be tuned by changing the radius of QDs and the GaNcompositions, which play a fundamental role in the optical and electronic properties of QDs of all the transitions in the degenerate bands. Also, the theoretically calculated emission intensity spectrum shifted towards higher energy regions (lower wavelengths) by mere increasing the alloy compositions (x) of the semiconductor quantum Dot active region
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References
Ahmed, S. & Mohammed, S. (2010). Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations. IEEE Transactions on Electron Devices, 57, 1, pp. pp. 164 – 173..
Bera, D., Qian, L., Tseng, T.K. et al. (2010). Quantum Dots and Their Multimodal Applications: A Review, Materials, 3, 4, pp. 2260-2345.
Efros, A. L. (1996). Band-edge Exciton in Quantum Dots of Semiconductors with a Degenerate Valence Band. Phys. Rev. B, Vol. 54, No. 7, 4843.
Eric, D. et al. (2019). Optical properties of InN/GaN quantum dot superlattice by changing dot size and interdot spacing, RIP, 13, 102246.
Hanada, T. (2013). Basic Properties of ZnO, GaN, and Related Materials. Journal of Applied Physics. pp1-19.
Imran, A. et al. (2018). Size and shape dependent optical properties of InAs quantum dots.
Khan, A. et al. (2018). Solution Processed Trilayer Structure for High-Performance PerovskitePhotodetector, Nanoscale Res Lett, 13(1), 399.
Kunets V.P (1999). Model of optical transitions in wurzite type quantum dots .Journal of Semiconductor physics. vol.2, pp.22-27.
Osuwa, J.C and OriakuC.I (2010). Laser induced changes on band gap and optoelectronic properties of chalcogenide glassy Cu0.11Cd0. 40S0. 49 thin films. Journal of Non-Oxide Glasses, 2, pp. 1-5.
Oriaku, C.I andOsuwa, J.C (2009). On the optical dispersion parameters of thin film Al3 doped ZnO transparent conducting glasses. Journal of Ovonic Research, 5, 6, pp. 213-218.
Pelant,I. and Valenta, J.(2012). Luminescence Spectroscopy of Semiconductors. Oxford Press.
Robinson, J. W. et al. (2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field, App Phys. Lett., 86(21), 213103.
Schubert, M. F. et al. (2008). Polarization-matched GaInN∕AlGaInN multi-quantum-welllight-emitting diodes with reduced efficiency droop. App Phys. Lett., 93(4), 041102.
Song, C. et al. (2019). Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs.
Steigerwald, D. et al. (1997). III-V Nitride Semiconductors for High Performance Blue and Green Light Emitting Devices, JOM. University Press;New York.
Wei, J. et al. (2018) .β-Ga2O3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy. Journal of Semiconductor, 40, 012802.
Yanlin H. and Hyo J. S. (2012). Luminescence Properties and Refractive-Index Characterization of Li+-Doped PbWO4 Single Crystals. J. Korean Phys. Soc.Vol. 50, No. 2, pp. 493 - 499.
Zhou, A.P. and Sheng, W.D (2008).Electron and hole effective masses in self-assembled quantumDots.The European Physical Journal B. DOI: 10.1140/epjb/e2009-00098-2.
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